OTCS study of defect state in Fe-doped semi-insulating InP induced by ion irradiation and thermal annealing
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference20 articles.
1. Deep traps in ideal n-InP Schottky diodes
2. Interaction of deep‐level traps with the lowest and upper conduction minima in InP
3. Deep Impurity Levels in InP LEC Crystals
4. A study of deep level in bulkn‐InP by transient spectroscopy
5. Proton bombardment in InP
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2. Deep‐level transient conductance spectroscopy of high resistivity semiconductors;physica status solidi (c);2005-03
3. Correlation between the depth profiles of the implantation-induced carriers and the lattice strains in high-energy implanted and annealed InP;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2001-04
4. Electrical characterization of He-ion implantation-induced deep levels in p+n InP junctions;Journal of Applied Physics;1999-11
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