A study of deep level in bulkn‐InP by transient spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.328515
Reference21 articles.
1. Investigation of microplasmas in InP avalanche photodiodes
2. X‐ray topographic study of dark‐spot defects in GaAs‐Ga1−xAlxAs double‐heterostructure wafers
3. Photocapacitance effects of deep traps inn‐type InP
4. Transient capacitance in GaAs and InP MOS capacitors
5. Deep traps in ideal n-InP Schottky diodes
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3. Impact of proton irradiation with different fluences on the characteristics of InP/InGaAs heterostructure;Radiation Effects and Defects in Solids;2019-07-26
4. Study of deep level defect behavior in undoped n-InP (100) after rapid thermal annealing;Microelectronic Engineering;2011-04
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