X‐ray topographic study of dark‐spot defects in GaAs‐Ga1−xAlxAs double‐heterostructure wafers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.88430
Reference7 articles.
1. Degradation of CW GaAs double-heterojunction lasers at 300 K
2. Defect structure introduced during operation of heterojunction GaAs lasers
3. Growth of Dark Lines from Crystal Defects in GaAs-GaAlAs Double Heterostructure Crystals
4. GaAs–AlxGa1−xAs Double Heterostructure Injection Lasers
5. Interface stress of AlxGa1−xAs–GaAs layer structures
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