Nanostructuring of conduction channels in (In,Ga)As-InP heterostructures: Overcoming carrier generation caused by Ar ion milling-Reference-Cited by-同舟云学术

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Nanostructuring of conduction channels in (In,Ga)As-InP heterostructures: Overcoming carrier generation caused by Ar ion milling

Published:2018-04-09 Issue:15 Volume:112 Page:151602
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hortelano V.¹²,Weidlich H.¹,Semtsiv M. P.²,Masselink W. T.²,Ramsteiner M.³,Jahn U.³,Biermann K.³,Takagaki Y.³^ORCID

Affiliation:

1. Institute Prof. Dr. Georg Kurz GmbH, Stöckheimer Weg 1, 50829 Cologne, Germany

2. Department of Physics, Humboldt University Berlin, Newton Str. 15, 12489 Berlin, Germany

3. Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5022967

Reference26 articles.

1. Demonstration of magnetic-field-induced rectification using circular ballistic channels with a rough boundary

2. Effect of low-temperature photoconduction on the depletion width in GaAs-AlGaAs wire

3. One-Dimensional Conduction in the 2D Electron Gas of a GaAs-AlGaAs Heterojunction

4. Boundary scattering in quantum wires

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ballistic transport and surface scattering in (In,Ga)As-InP heterostructure narrow channels;Semiconductor Science and Technology;2023-04-03

2. Molecular beam epitaxy of InAs quantum wells on InP(001) for high mobility two-dimensional electron gases;CrystEngComm;2023

3. Magnetic-field-induced transport asymmetry in two-terminal circular ballistic bends;Journal of Applied Physics;2019-04-14

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