Demonstration of magnetic-field-induced rectification using circular ballistic channels with a rough boundary
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/1361-6641/aa90ab/pdf
Reference26 articles.
1. Artificial Brownian motors: Controlling transport on the nanoscale
2. Electron Transport in Quantum Dots
3. Nonlinear Electron Transport in an Asymmetric Microjunction: A Ballistic Rectifier
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1. Ballistic transport and surface scattering in (In,Ga)As-InP heterostructure narrow channels;Semiconductor Science and Technology;2023-04-03
2. Molecular beam epitaxy of InAs quantum wells on InP(001) for high mobility two-dimensional electron gases;CrystEngComm;2023
3. Magnetic-field-induced transport asymmetry in two-terminal circular ballistic bends;Journal of Applied Physics;2019-04-14
4. Nanostructuring of conduction channels in (In,Ga)As-InP heterostructures: Overcoming carrier generation caused by Ar ion milling;Applied Physics Letters;2018-04-09
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