Molecular beam epitaxy of InAs quantum wells on InP(001) for high mobility two-dimensional electron gases-Reference-Cited by-同舟云学术

Molecular beam epitaxy of InAs quantum wells on InP(001) for high mobility two-dimensional electron gases

Published:2023 Issue:39 Volume:25 Page:5541-5547
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Aleksandrova Anna¹²^ORCID,Golz Christian¹²,Biermann Klaus³,Trampert Achim³,Semtsiv Mykhaylo¹,Weidlich Helmut²,Masselink William Ted¹,Takagaki Yukihiko³^ORCID

Affiliation:

1. Department of Physics, Humboldt University Berlin, Newton Str. 15, 12489 Berlin, Germany

2. Institute Kurz GmbH, Stockheimer Weg 1, 50829 Cologne, Germany

3. Paul Drude Institute for Solid State Electronics, Hausvogteiplatz 5-7, 10117 Berlin, Germany

Abstract

For InAs quantum-well structures grown on InP, the dislocations generated in the strain relaxation is confined in the compositionally graded buffer layer, leaving the two-dimensional electron gases nearly unscattered by the defects.

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/CE/D3CE00010A

Reference26 articles.

1. Spintronics: Fundamentals and applications

2. Gate Control of Spin-Orbit Interaction in an Inverted In0.53Ga0.47As/In0.52Al0.48As Heterostructure

3. First-principles studies of orbital and spin-orbit properties of GaAs, GaSb, InAs, and InSb zinc-blende and wurtzite semiconductors

4. Transport properties of modulation-doped InAs-inserted-channel In0.75Al0.25As/In0.75Ga0.25As structures grown on GaAs substrates

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