Flicker noise in metal‐oxide‐semiconductor transistors from liquid helium to room temperature
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.344321
Reference14 articles.
1. Modified 1/f trapping noise theory and experiments in MOS transistors biased from weak to strong inversion—Influence of interface states
2. 1/fand random telegraph noise in silicon metal‐oxide‐semiconductor field‐effect transistors
3. A thermal activation model for 1/ƒy noise in Si-MOSFETs
4. 1/f noise and percolation in impurity bands in inversion layers
5. Noise in inversion layers near the metal-insulator transition
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