Self-consistent calculations forn-type hexagonal SiC inversion layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1687977
Reference27 articles.
1. Progress in silicon carbide semiconductor electronics technology
2. Dopant Redistribution during Thermal Oxidation of Monocrystalline Beta ‐ SiC Thin Films
3. Hall mobility and free electron density at the SiC/SiO2 interface in 4H–SiC
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