Growth of ultrahigh-density quantum-confined germanium dots on SiO2 thin films
Author:
Affiliation:
1. L2MP UMR CNRS 6137, Polytech Marseille-Technopole de Château Gombert, 13451 Marseille Cedex 20, France
2. Dipartimento di Fisica, Unita’ CNISM, Universita’ di Roma Tor Vergata, 00133 Roma, Italy
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Reference34 articles.
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2. Jan De Blauwe, IEEE Trans. Nanotechnol.1536-125X 1, 72 (2002);
3. Traps in germanium nanocrystal memory and effect on charge retention: Modeling and experimental measurements
4. Electrical study of Ge-nanocrystal-based metal-oxide-semiconductor structures for p-type nonvolatile memory applications
5. Photoluminescence study of the crossover from two‐dimensional to three‐dimensional growth for Ge on Si(100)
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