Electrical study of Ge-nanocrystal-based metal-oxide-semiconductor structures for p-type nonvolatile memory applications
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1751227
Reference15 articles.
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4. Charge-trap memory device fabricated by oxidation of Si/sub 1-x/Ge/sub x/
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