Growth of GaxIn1−xAs by low‐pressure metalorganic vapor‐phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.337201
Reference21 articles.
1. Metalorganic chemical vapor deposition of III‐V semiconductors
2. Low pressure metalorganic chemical vapor deposition of InP and related compounds
3. 1.2–1.6 μm GaxIn1−xAsyP1−y-InP DH lasers grown by LPMOCVD
4. The growth and characterization of uniform Ga1-xInxAs (X ≤.25) by Organometallic VPE
5. Organometallic vapor phase epitaxial growth of high purity GaInAs using trimethylindium
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1. Simultaneous analysis of current–voltage and capacitance–voltage characteristics of metal–insulator–semiconductor diodes with a high mid-gap trap density;Journal of Applied Physics;1999-05
2. Influence of Growth Parameters on the Properties of InxGa1-xAs Grown on GaAs by OMVPE;MRS Proceedings;1994
3. Photoluminescence of heavily Zn‐doped Ga0.85In0.15As grown by low‐pressure metalorganic vapor phase epitaxy;Journal of Applied Physics;1992-11
4. A Study of Layer Thickness and Interface Qualities of Strained InxGa1-xAs/GaAs Layers;Japanese Journal of Applied Physics;1992-01-15
5. Photoluminescence of heavily doped GaAs and Ga0.85In0.15As;Canadian Journal of Physics;1991-03-01
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