Simultaneous analysis of current–voltage and capacitance–voltage characteristics of metal–insulator–semiconductor diodes with a high mid-gap trap density
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.370157
Reference24 articles.
1. Energy density distribution of interface states in Au Schottky contacts to epitaxial In0.21Ga0.79As:Zn layers grown on GaAs by metalorganic vapor phase epitaxy
2. High barrier height GaN Schottky diodes: Pt/GaN and Pd/GaN
3. A New Method for the Simultaneous Analysis of I-V/T and C-V/T Measurements of an Au/P-Inp Epitaxial Schottky Diode
4. A self-consistent technique for the analysis of the temperature dependence of current–voltage and capacitance–voltage characteristics of a tunnel metal-insulator-semiconductor structure
5. Effect of doping on the forward current-transport mechanisms in a metal–insulator–semiconductor contact to InP:Zn grown by metal organic vapor phase epitaxy
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