Influence of different metal over-layers on the electrical behaviour of the MIS Schottky diodes
Author:
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00207217.2012.743077
Reference30 articles.
1. Numerical methods for semiconductor device simulation
2. Barrier height inhomogeneities in a Ni/SiC-6H Schottky n-type diode
3. Temperature dependence of the band gap of silicon
4. Simulation studies of current transport in metal–insulator–semiconductor Schottky barrier diodes
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