Capacitance-voltage and deep-level-transient spectroscopy characterization of defects near SiO2/SiC interfaces
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3552303
Reference49 articles.
1. A 3 kV Schottky barrier diode in 4H-SiC
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