Trap Characterization of Trench-Gate SiC MOSFETs Based on Transient Drain Current
Author:
Affiliation:
1. Institute of Semiconductor Device Reliability Physics, Beijing University of Technology, Beijing, China
2. Center for Device Thermography and Reliability, University of Bristol, Bristol, U.K.
Funder
National Key Research and Development Program of China
National Natural Science Foundation of China
Beijing Natural Science Foundation
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/63/10067246/10039506.pdf?arnumber=10039506
Reference37 articles.
1. Transient-Current Method for Measurement of Active Near-Interface Oxide Traps in 4H-SiC MOS Capacitors and MOSFETs
2. Nitrogen and Hydrogen Induced Trap Passivation at the SiO2/4H-SiC Interface
3. SiC power devices—Present status, applications and future perspective;ostling;Proc IEEE 23rd Int Symp Power Semicond Devices ICs,2011
4. Interface state density and channel mobility for 4H-SiC MOSFETs with nitrogen passivation
5. Quantitative Investigation of Near Interface Traps in 4H-SiC MOSFETs via Drain Current Deep Level Transient Spectroscopy
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1. A Trap Characterization System for GaN HEMTs Based on Transient Drain Voltage;IEEE Transactions on Instrumentation and Measurement;2024
2. Study and Optimization of Two-State Transient Currents at Millisecond Time Scales in MIS Tunnel Diodes;IEEE Transactions on Electron Devices;2023-10
3. Trap characterization of GaN High-electron-mobility Transistors Based on the Transient Drain Voltage;Journal of Physics: Conference Series;2023-06-01
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