Trap Characterization of Trench-Gate SiC MOSFETs Based on Transient Drain Current
Author:
Affiliation:
1. Institute of Semiconductor Device Reliability Physics, Beijing University of Technology, Beijing, China
2. Center for Device Thermography and Reliability, University of Bristol, Bristol, U.K.
Funder
National Key Research and Development Program of China
National Natural Science Foundation of China
Beijing Natural Science Foundation
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/63/10067246/10039506.pdf?arnumber=10039506
Reference37 articles.
1. Transient-Current Method for Measurement of Active Near-Interface Oxide Traps in 4H-SiC MOS Capacitors and MOSFETs
2. Nitrogen and Hydrogen Induced Trap Passivation at the SiO2/4H-SiC Interface
3. SiC power devices—Present status, applications and future perspective;ostling;Proc IEEE 23rd Int Symp Power Semicond Devices ICs,2011
4. Interface state density and channel mobility for 4H-SiC MOSFETs with nitrogen passivation
5. Quantitative Investigation of Near Interface Traps in 4H-SiC MOSFETs via Drain Current Deep Level Transient Spectroscopy
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Methodology for Characterizing Degradation Locations of Planar and Trench Gate SiC Power Mosfets Under Repetitive Short-Circuit Stress;IEEE Transactions on Power Electronics;2024-11
2. Study of the Influence of Different Gate Oxide Traps on Threshold Voltage Drift of SiC MOSFET Based on Transient Current;IEEE Transactions on Power Electronics;2024-08
3. A Fast Adaptive LPCA Method for Fetal ECG Extraction Based on Multichannel Signals;IEEE Transactions on Instrumentation and Measurement;2024
4. A Trap Characterization System for GaN HEMTs Based on Transient Drain Voltage;IEEE Transactions on Instrumentation and Measurement;2024
5. Study and Optimization of Two-State Transient Currents at Millisecond Time Scales in MIS Tunnel Diodes;IEEE Transactions on Electron Devices;2023-10
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3