Electrical characterization and physical analysis of epitaxial CoSi2 grown from the Si〈100〉/Ti/Co system-Reference-Cited by-同舟云学术

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Electrical characterization and physical analysis of epitaxial CoSi2 grown from the Si〈100〉/Ti/Co system

Published:1996-07-15 Issue:2 Volume:80 Page:952-961
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:

Author:

Hatzikonstantinidou Sofia¹,Wikman Peter¹,Zhang Shi‐Li¹,Sture Petersson C.¹

Affiliation:

1. Royal Institute of Technology, Department of Electronics, Laboratory of Solid State Electronics, Electrum 229, S‐164 40 Kista‐Stockholm, Sweden

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference35 articles.

1. S. L. Hsia, T. Y. Tan, P. Smith, and G. E. McGuire, J. Appl. Phys. 70, 7579 (1991).JAPIAU0021-8979

2. S. Hatzikonstantinidou, H.-E. Nilsson, C. Fröjdh, and C. S. Petersson, in 16th Nordic Semiconductor Meeting, Laugarvatn Island, 1994 (unpublished), p. 226.

3. A. Schüppen, M. Marso, and H. Lüth, IEEE Trans. Electron Devices 41, 751 (1994).IETDAI0018-9383

4. E. Rosencher, P. A. Badoz, J. C. Pfister, F. Arnaud d’Avitaya, G. Vincent, and S. Delage, Appl. Phys. Lett. 49, 271 (1986).APPLAB0003-6951

5. S. Mantl, Mater. Sci. Rep. 8, 95 (1992).MSREEL0920-2307

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4. Ballistic electron emission microscopy studies of the temperature dependence of Schottky barrier height distribution in CoSi2/n-Si(100) diodes formed by solid phase reaction;Solid-State Electronics;2000-12

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