Ballistic electron emission microscopy studies of the temperature dependence of Schottky barrier height distribution in CoSi2/n-Si(100) diodes formed by solid phase reaction-Reference-Cited by-同舟云学术

Ballistic electron emission microscopy studies of the temperature dependence of Schottky barrier height distribution in CoSi2/n-Si(100) diodes formed by solid phase reaction

Published:2000-12 Issue:12 Volume:44 Page:2217-2223
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Zhu Shiyang,Qu Xin-Ping,Meirhaeghe R.L.Van,Detavernier C.,Ru Guo-Ping,Cardon F.,Li Bing-Zong

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Self-aligned CoSi/sub 2/ for 0.18 μm and below

2. Epitaxial growth of CoSi2on both (111) and (100) Si substrates by multistep annealing of a ternary Co/Ti/Si system

3. Epitaxial CoSi2films on Si(100) by solid‐phase reaction

4. Electrical transport in (100)CoSi2/Si contacts

5. Electrical characterization and physical analysis of epitaxial CoSi2 grown from the Si〈100〉/Ti/Co system

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Technology for Producing Schottky Contacts Based on an IrSi–Si Composite;Russian Microelectronics;2022-06

2. IrSi–Si Contact Capacitance‒Voltage Characteristics and Study of Its Change in Schottky Barrier Height;Journal of Communications Technology and Electronics;2020-03

3. Texture in thin film silicides and germanides: A review;Applied Physics Reviews;2016-09

4. Analysis of barrier height inhomogeneity in Au/n-GaAs Schottky barrier diodes by Tung model;Journal of Alloys and Compounds;2010-09

5. The barrier height distribution in identically prepared Al/p-Si Schottky diodes with the native interfacial insulator layer (SiO2);Physica B: Condensed Matter;2007-11