IrSi–Si Contact Capacitance‒Voltage Characteristics and Study of Its Change in Schottky Barrier Height-Reference-Cited by-同舟云学术

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IrSi–Si Contact Capacitance‒Voltage Characteristics and Study of Its Change in Schottky Barrier Height

Published:2020-03 Issue:3 Volume:65 Page:301-305
ISSN:1064-2269
Container-title:Journal of Communications Technology and Electronics
language:en
Short-container-title:J. Commun. Technol. Electron.

Author:

Kerimov E. A.,Musaeva S. N.

Publisher

Pleiades Publishing Ltd

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1064226920020151.pdf

Reference7 articles.

1. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1969; Mir, Moscow, 1984).

2. E. A. Kerimov, Vestn. KemGU 1 (3), 165 (2013).

3. E. A. Kerimov, Izv. NANA 31 (2), 166 (2011).

4. E. A. Kerimov, in Proc. 7th Int. Sci.-Pract. Conf., Moscow, June 29,2013, p. 7.

5. Zhu Sliyang, Qu Xin-Ping, and R. L. Van Meirhaeghe, Solid-State Electron. 44, 2217 (2000).

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