Study of charge trapping as a degradation mechanism in electrically alterable read‐only memories
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.329908
Reference10 articles.
1. High current injection into SiO2 from Si rich SiO2 films and experimental applications
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3. Dual-electron-injector-structure electrically alterable read-only-memory modeling studies
4. Electrically-alterable memory using a dual electron injector structure
5. Charge trapping studies in SiO2using high current injection from Si‐rich SiO2films
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1. Low temperature (<700 °C) SiO2 and Si-rich SiO2 films: Short review;Journal of Vacuum Science & Technology B;2023-04-17
2. Electroluminescence in MOS structures with Si/SiO2 nanometric multilayers;Solid State Communications;2000-03
3. Observation of Si cluster formation in SiO2 films through annealing process using x-ray photoelectron spectroscopy and infrared techniques;Applied Physics Letters;1998-02-09
4. References;Thin Films by Chemical Vapour Deposition;1990
5. Electroluminescence studies in silicon dioxide films containing tiny silicon islands;Journal of Applied Physics;1984-07-15
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