Effect of ion energy on photoresist etching in an inductively coupled, traveling wave driven, large area plasma source
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1364648
Reference13 articles.
1. Langmuir probe measurements of a radio frequency induction plasma
2. Two-dimensional modeling of high plasma density inductively coupled sources for materials processing
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4. Modeling and experimental studies of a transformer coupled plasma (TCP/sup TM/) source design for large area plasma processing
5. Dynamic model of the radio-frequency plasma sheath in a highly asymmetric discharge cell
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1. Ion energy and angular distributions in planar Ar/O2 inductively coupled plasmas: hybrid simulation and experimental validation;Journal of Physics D: Applied Physics;2019-05-20
2. Reactive-ion etching of nylon fabric meshes using oxygen plasma for creating surface nanostructures;Applied Surface Science;2015-11
3. Plasma-surface interactions of advanced photoresists with C[sub 4]F[sub 8]∕Ar discharges: Plasma parameter dependencies;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2009
4. Cleaning of Glass Disk in Oxygen Plasma by Using Compact Electron-Beam-Excited Plasma Source;Japanese Journal of Applied Physics;2002-11-15
5. Effect of Ar addition to an O2 plasma in an inductively coupled, traveling wave driven, large area plasma source: O2/Ar mixture plasma modeling and photoresist etching;Journal of Applied Physics;2001-10
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