Analysis of temperature dependent current-conduction mechanisms in Au/TiO2/n-4H-SiC (metal/insulator/semiconductor) type Schottky barrier diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4893970
Reference46 articles.
1. Schottky barrier height modification in Au/n-type 6H–SiC structures by PbS interfacial layer
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3. Investigation of deep-level defects in conductive polymer on n-type 4H- and 6H-silicon carbide substrates using I-V and deep level transient spectroscopy techniques
4. Chemisorption and Decomposition of Thiophene and Furan on the Si(100)-2 × 1 Surface: A Quantum Chemical Study
5. Barrier height determination for n-type 4H-SiC schottky contacts made using various metals
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