Barrier height determination for n-type 4H-SiC schottky contacts made using various metals-Reference-Cited by-同舟云学术

Barrier height determination for n-type 4H-SiC schottky contacts made using various metals

Published:1998-07 Issue:7 Volume:27 Page:871-875
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Yakimova R.,Hemmingsson C.,Macmillan M. F.,Yakimov T.,Janzén E.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-998-0112-5.pdf

Reference17 articles.

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3. A. Itoh, T. Kimoto and H. Matsunami, IEEE Electron. Dev. Lett. 16 (6), 280 (1995).

4. A. Itoh, O. Takemura, T. Kimoto and H. Matsunami, Inst. Phys. Conl. Ser. No 142, (Bristol, U.K.: IOP, 1996), ch. 4, p. 685.

5. A.L. Syrkin, J.M. Bluet, G. Bastide, T. Bretagnon, A.A. Lebedev, M.G. Rastegaeva, N.S. Savkina and V.E. Chelnokov, Diamond and Related Materials (1997), in print.

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