Influence of growth conditions on the photoluminescence of self-assembled InAs/GaAs quantum dots
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.369549
Reference24 articles.
1. Growth by molecular beam epitaxy and characterization of InAs/GaAs strained‐layer superlattices
2. Critical layer thickness for self-assembled InAs islands on GaAs
3. Phonons and radiative recombination in self-assembled quantum dots
4. Self‐organized growth of regular nanometer‐scale InAs dots on GaAs
5. InAs/GaAs quantum dots radiative recombination from zero-dimensional states
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