The EL2 trap in highly doped GaAs:Te
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.360480
Reference14 articles.
1. Origin of the 0.82‐eV electron trap in GaAs and its annihilation by shallow donors
2. Effect of Schottky barrier height on EL2 measurement by deep‐level transient spectroscopy
3. Characterization of a defect layer at a Schottky barrier interface by current and capacitance measurements
4. Electron traps in bulk and epitaxial GaAs crystals
5. The effect of annealing treatments on defect structure and diffusion lengths in bulkn‐type GaAs
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1. Characterization and Electrical Modeling Including Trapping Effects of AIN/GaN HEMT 4×50μm on Silicon Substrate;2018 13th European Microwave Integrated Circuits Conference (EuMIC);2018-09
2. Characterization and Electrical Modeling Including Trapping Effects of A1n/GaN HEMT 4⨯50μmon Silicon Substrate;2018 48th European Microwave Conference (EuMC);2018-09
3. Quantitative determination of the doping level distribution in n-type GaAs using absorption mapping;The European Physical Journal Applied Physics;2004-07
4. EL2, EL3, and EL6 defects in GaAs highly implanted with sulfur;Journal of Applied Physics;2000-11
5. Rapid Thermal Annealing Induced Deep Level Defects in Te-Doped GaAs;physica status solidi (a);1998-08
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