Effect of Schottky barrier height on EL2 measurement by deep‐level transient spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341655
Reference10 articles.
1. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
2. Effect of Metals Used for Schottky Barrier Contacts on DLTS Signals for LEC n-GaAs Crystals
3. Effects of leakage current on deep level transient spectroscopy
4. Electron traps in bulk and epitaxial GaAs crystals
5. Reduction of Schottky barrier heights by surface oxidation of GaAs and its influence on DLTS signals for the midgap level EL2
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3. Deep levels in metal–oxide–semiconductor capacitors fabricated on n-type In0.53Ga0.47As lattice matched to InP substrates;Semiconductor Science and Technology;2019-06-21
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5. Effect of 60Co γ-ray irradiation on electrical properties of Ti/Au/GaAs1−xNx Schottky diodes;Current Applied Physics;2016-08
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