Spatially direct and indirect transitions of self-assembled GeSi/Si quantum dots studied by photoluminescence excitation spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3424789
Reference20 articles.
1. Si/Ge nanostructures
2. Photoluminescence study of the crossover from two‐dimensional to three‐dimensional growth for Ge on Si(100)
3. Island formation during growth of Ge on Si(100): A study using photoluminescence spectroscopy
4. Photoluminescence study of the initial stages of island formation for Ge pyramids/domes and hut clusters on Si(001)
5. Nucleation and growth of self-assembled Ge/Si(001) quantum dots
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