Nucleation and growth of self-assembled Ge/Si(001) quantum dots
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.58.13115/fulltext
Reference26 articles.
1. Three-Dimensional Carrier Confinement in Strain-Induced Self-Assembled Quantum Dots
2. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
3. Self‐organized growth of regular nanometer‐scale InAs dots on GaAs
4. Critical layer thickness for self-assembled InAs islands on GaAs
5. Growth of self-assembled homogeneous SiGe-dots on Si(100)
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2. Tunable photoluminescence of self-assembled GeSi quantum dots by B+ implantation and rapid thermal annealing;Journal of Applied Physics;2014-06-21
3. (Invited) Structural and Optical Properties of InN Quantum Dots Grown by an Alternating Supply of Source Precursors;ECS Transactions;2014-03-20
4. Growth and Photoluminescence Studies of High-Density InN Quantum Dots Grown by a Two-Step Alternating Supply of Source Precursors;Science of Advanced Materials;2013-02-01
5. Improving Optical Properties of Ge Layers Fabricated by Epitaxial Growth Combined with Ge Condensation;Japanese Journal of Applied Physics;2012-04-20
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