Validity of mobility universality for scaled metal–oxide–semiconductor field-effect transistors down to 100 nm gate length-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Validity of mobility universality for scaled metal–oxide–semiconductor field-effect transistors down to 100 nm gate length

Published:2002-11 Issue:9 Volume:92 Page:5228-5232
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Matsumoto S.,Hisamitsu K.,Tanaka M.,Ueno H.,Miura-Mattausch M.,Mattausch H. J.,Kumashiro S.,Yamaguchi T.,Odanaka S.,Nakayama N.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1510957

Reference13 articles.

1. Physical understanding of low-field carrier mobility in silicon MOSFET inversion layer

2. Measurements and modeling of the n-channel MOSFET inversion layer mobility and device characteristics in the temperature range 60-300 K

3. A new approach to verify and derive a transverse-field-dependent mobility model for electrons in MOS inversion layers

4. Scaled silicon MOSFET's: universal mobility behavior

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Advanced Short-Channel-Effect Modeling With Applicability to Device Optimization—Potentials and Scaling;IEEE Transactions on Electron Devices;2019-09

2. A Novel Method of MOSFET Series Resistance Extraction Featuring Constant Mobility Criteria and Mobility Universality;IEEE Transactions on Electron Devices;2010-04

3. Drain current model for thin-film transistors with interface trap states;Journal of Applied Physics;2010-02

4. PROPAGATION OF SOLITARY WAVES ON LOSSY NONLINEAR TRANSMISSION LINES;International Journal of Modern Physics B;2009-01-10

5. Surface-Potential-Based Drain Current Model for Polycrystalline Silicon Thin-Film Transistors;Japanese Journal of Applied Physics;2008-10-17

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3