Observation of trapping defects in 4H–silicon carbide metal-oxide-semiconductor field-effect transistors by spin-dependent recombination
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1851592
Reference26 articles.
1. Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces
2. Insulator investigation on SiC for improved reliability
3. Advances in SiC MOS Technology
4. Physics-based numerical modeling and characterization of6H-silicon-carbide metal–oxide–semiconductor field-effect transistors
5. What can electron paramagnetic resonance tell us about the Si/SiO[sub 2] system?
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