Interface carbon defects at 4H-SiC(0001)/SiO2 interfaces studied by electron-spin-resonance spectroscopy-Reference-Cited by-同舟云学术

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Interface carbon defects at 4H-SiC(0001)/SiO2 interfaces studied by electron-spin-resonance spectroscopy

Published:2018-08-06 Issue:6 Volume:113 Page:061605
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Umeda T.¹,Kim G.-W.¹,Okuda T.²,Sometani M.³^ORCID,Kimoto T.²,Harada S.³

Affiliation:

1. Institute of Applied Physics, University of Tsukuba, Tsukuba 305-8573, Japan

2. Graduate School of Engineering, Kyoto University, Kyoto 615-8510, Japan

3. National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8569, Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology

Council for Science, Technology and Innovation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5041059

Reference23 articles.

1. Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

2. N-channel field-effect mobility inversely proportional to the interface state density at the conduction band edges of SiO2/4H-SiC interfaces

3. Characterization of traps at nitrided SiO2/SiC interfaces near the conduction band edge by using Hall effect measurements

4. SiC/SiO₂ Interface States: Properties and Models

5. Characterization of paramagnetic defect centers in three polytypes of dry heat treated, oxidized SiC

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1. Differences between Polar-Face and Non-Polar Face 4H-SiC/SiO<sub>2 </sub>Interfaces Revealed by Magnetic Resonance Spectroscopy;Defect and Diffusion Forum;2024-08-22

2. NH₃ Synthesis via Electrocatalytic N₂ Reduction Reaction on the Defective Surfaces of Nb₂Mo₂C₃T_x MXenes: Theoretical and Experimental Studies;Energy & Fuels;2024-06-12

3. Characterization of nitrided SiC(1 1‾ 00) MOS structures by means of electrical measurements and X-ray photoelectron spectroscopy;Materials Science in Semiconductor Processing;2024-06

4. Generation of single photon emitters at a SiO₂/SiC interface by high-temperature oxidation and reoxidation at lower temperatures;Applied Physics Express;2024-05-01

5. Carrier injection induced degradation of nitrogen passivated SiC–SiO2 interface simulated by time-dependent density functional theory;Journal of Applied Physics;2024-03-14

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