Physics-based numerical modeling and characterization of6H-silicon-carbide metal–oxide–semiconductor field-effect transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1499523
Reference23 articles.
1. Mobility in 6H-SiC n-Channel MOSFETs
2. Characterization of inversion and accumulation layer electron transport in 4H and 6H-SiC MOSFETs on implanted P-type regions
3. A detailed simulation study of the performance of -silicon carbide MOSFETs and a comparison with their silicon counterparts
4. A reliable approach to charge-pumping measurements in MOS transistors
5. A physically based mobility model for numerical simulation of nonplanar devices
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