Effect of steady-state hydrogen coverage on the evolution of crosshatch morphology during Si1−xGex/Si(001) growth from hydride precursors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1533833
Reference34 articles.
1. B‐doped fully strained Si1−xGexlayers grown on Si(001) by gas‐source molecular beam epitaxy from Si2H6, Ge2H6, and B2H6: Charge transport properties
2. Strain-Induced Two-Dimensional Electron Gas in Selectively DopedSi/SixGe1−xSuperlattices
3. Three-Dimensional Carrier Confinement in Strain-Induced Self-Assembled Quantum Dots
4. Growth, microstructure, and strain relaxation in low‐temperature epitaxial Si1−xGex alloys deposited on Si(001) from hyperthermal beams
5. Evolution of surface roughness in epitaxial Si0.7Ge0.3(001) as a function of growth temperature (200–600 °C) and Si(001) substrate miscut
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