Extraction of dipolar coupling constants from low-frequency electrically detected magnetic resonance and near-zero field magnetoresistance spectra via least squares fitting to models developed from the stochastic quantum Liouville equation-Reference-Cited by-同舟云学术

Extraction of dipolar coupling constants from low-frequency electrically detected magnetic resonance and near-zero field magnetoresistance spectra via least squares fitting to models developed from the stochastic quantum Liouville equation

Published:2021-12-21 Issue:23 Volume:130 Page:234401
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Frantz Elias B.¹²^ORCID,Harmon Nicholas J.³^ORCID,Michalak David J.⁴^ORCID,Henry Eric M.⁴,Flatté Michael E.⁵^ORCID,King Sean W.²^ORCID,Clarke James S.⁴,Lenahan Patrick M.¹⁶^ORCID

Affiliation:

1. Intercollege Graduate Degree Program in Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, USA

2. Intel Supplier Technology Industry Development, Intel Corporation, Hillsboro, Oregon 97124, USA

3. Department of Physics and Engineering Science, Costal Carolina University, Conway, South Carolina 29526, USA

4. Intel Components Research, Intel Corporation, Hillsboro, Oregon 97124, USA

5. Department of Physics and Astronomy, University of Iowa, Iowa City, Iowa 52242, USA

6. Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802, USA

Funder

Defense Threat Reduction Agency

Intel Corporation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/am-pdf/10.1063/5.0075460

Reference45 articles.

1. Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance I

2. Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance II

3. ESR centers, interface states, and oxide fixed charge in thermally oxidized silicon wafers

4. Effect of bias on radiation‐induced paramagnetic defects at the silicon‐silicon dioxide interface

5. Hole traps and trivalent silicon centers in metal/oxide/silicon devices

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1. Near Zero Field Magnetoresistance Spectroscopy: A New Tool in Semiconductor Reliability Physics;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03

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