The effect of growth interruption on the properties of InGaAs/InAlAs quantum well structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120729
Reference9 articles.
1. Heterointerfaces in quantum wells and epitaxial growth processes: Evaluation by luminescence techniques
2. Evidence for quantum well asymmetry in optical absorption
3. Photoreflectance study of GaAs/GaAlAs digital alloy compositionally graded structures
4. Modelling and analysis of photoreflectance spectra of GaAs/AlGaAs single-quantum-well structures
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1. Influence of Indium Composition on InAlAs QCLs;2024-07-25
2. Interruption time effects on InGaAs/InAlAs superlattices of quantum cascade laser structures grown by MOCVD;Superlattices and Microstructures;2016-12
3. Chemical depth profiling and 3D reconstruction of III-V heterostructures selectively grown on non-planar Si substrates by MOCVD;physica status solidi (RRL) - Rapid Research Letters;2015-02-23
4. Optical properties of InGaAs/InAIAs diffused double quantum wells;Journal of Applied Physics;2000-03-15
5. Effect of growth interruption and the introduction of H[sub 2] on the growth of InGaN/GaN multiple quantum wells;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000
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