Chemical depth profiling and 3D reconstruction of III-V heterostructures selectively grown on non-planar Si substrates by MOCVD-Reference-Cited by-同舟云学术

Chemical depth profiling and 3D reconstruction of III-V heterostructures selectively grown on non-planar Si substrates by MOCVD

Published:2015-02-23 Issue:3 Volume:9 Page:202-205
ISSN:1862-6254
Container-title:physica status solidi (RRL) - Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Gorbenko V.¹²³,Veillerot M.¹²,Grenier A.¹²,Audoit G.¹²,Hourani W.¹²,Martinez E.¹,Cipro R.³,Martin M.³,David S.³,Bao X.⁴,Bassani F.³,Baron T.³,Barnes J.-P.¹²

Affiliation:

1. Université Grenoble Alpes, CEA; 38000 Grenoble France

2. CEA, LETI, MINATEC Campus; 38054 Grenoble France

3. Université Grenoble Alpes, CNRS, LTM; 38000 Grenoble France

4. Applied Materials; 3050 Bowers Avenue Santa Clara CA 95054 USA

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Reference13 articles.

1. Chemical mechanical planarization of patterned InP in shallow trench isolation (STI) template structures using hydrogen peroxide–based silica slurries containing oxalic acid or citric acid

2. High mobility CMOS technologies using III–V/Ge channels on Si platform

3. Nanometre-scale electronics with III–V compound semiconductors

4. Selective Area Growth of InP in Shallow-Trench-Isolated Structures on Off-Axis Si(001) Substrates

5. CMOS compatible self-aligned S/D regions for implant-free InGaAs MOSFETs

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1. 3D Auger quantitative depth profiling of individual nanoscaled III–V heterostructures;Journal of Electron Spectroscopy and Related Phenomena;2016-11

2. SIMS depth profiling and topography studies of repetitive III–V trenches under low energy oxygen ion beam sputtering;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2016-05

3. Composition analysis of III–V materials grown in nanostructures: The self-focusing-SIMS approach;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2016-05

4. Chemical characterization of III–V heterostructures in 3D architecture;Microelectronic Engineering;2015-11