A study on Au/Ni/Au/Ge/Pd ohmic contact and its application to AlGaAs/GaAs heterojunction bipolar transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119421
Reference9 articles.
1. Pt/Ti/Ge/Pd ohmic contacts to GaAs: A structural, chemical, and electrical investigation
2. On the low resistance Au/Ge/Pd ohmic contact to n-GaAs
3. Thermally stable Pd/Ge ohmic contacts ton‐type GaAs
4. Low resistance (~10-6 Ωcm2) ohmic contact to n-GaAs processed at 175°C
5. Low resistance pd/ge ohmic contacts to epitaxially lifted-off n-type GaAs film
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1. Mechanisms of current flow in metal-semiconductor ohmic contacts;Semiconductors;2007-11
2. Pd/Ge(or Si)/Pd/Ti/Au ohmic contacts to n-type InGaAs for AlGaAs/GaAs HBTs;Metals and Materials International;2004-07
3. Comparison of Pd/Ge/Ti/Pt and Pd/Si/Ti/Pt Ohmic Contacts to N-Type InGaAs for AlGaAs/GaAs HBTs;Materials Science Forum;2004-03
4. Pd/Si-based ohmic contacts to n-type InGaAs for AlGaAs/GaAs HBTs;Materials Letters;2004-02
5. Comparison of Pd/Ge/Pd/Ti/Au and Pd/Ge/Ti/Pt ohmic contacts to n-type InGaAs;Materials Letters;2003-08
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