Pd/Si-based ohmic contacts to n-type InGaAs for AlGaAs/GaAs HBTs
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference13 articles.
1. Recent developments in ohmic contacts for III–V compound semiconductors
2. Thermally stable Pd/Ge ohmic contacts ton‐type GaAs
3. Low‐resistance nonspiking ohmic contact for AlGaAs/GaAs high electron mobility transistors using the Ge/Pd scheme
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1. Optimization of ohmic contact for InP-based transferred electronic devices;Journal of Semiconductors;2014-03
2. Ultra low-resistance palladium silicide Ohmic contacts to lightly doped n-InGaAs;Journal of Applied Physics;2012-09
3. On the activation of implanted silicon ions inp-In0.53Ga0.47As;Semiconductor Science and Technology;2012-06-13
4. Investigation on the effect of annealing process parameters on AuGeNi ohmic contact to n-GaAs using microstructural characteristics;Microelectronics Reliability;2011-08
5. Ohmic contacts with palladium diffusion barrier on III–V semiconductors;Vacuum;2010-05
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