High‐electron‐mobility‐transistor gain stability and its design implications for wide band millimeter wave receivers-Reference-Cited by-同舟云学术

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High‐electron‐mobility‐transistor gain stability and its design implications for wide band millimeter wave receivers

Published:1995-08 Issue:8 Volume:66 Page:4305-4312
ISSN:0034-6748
Container-title:Review of Scientific Instruments
language:en
Short-container-title:Review of Scientific Instruments

Author:

Wollack E. J.

Publisher

AIP Publishing

Subject

Instrumentation

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1145319

Reference21 articles.

1. A Continuous Comparison at 97 GHz Radiometer

2. Measurement of the Sunyaev-Zel'dovich effect toward Abell 2163 at a wavelength of 2.2 millimeters

3. Noise parameters and light sensitivity of low-noise high-electron-mobility transistors at 300 and 12.5 K

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