Noise parameters and light sensitivity of low-noise high-electron-mobility transistors at 300 and 12.5 K-Reference-Cited by-同舟云学术

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Noise parameters and light sensitivity of low-noise high-electron-mobility transistors at 300 and 12.5 K

Published:1986-02 Issue:2 Volume:33 Page:218-223
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Pospieszalski M.W.,Weinreb S.,Pane-Chane Chao ,Mishra U.K.,Palmateer S.C.,Smith P.M.,Hwang J.C.M.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/31949/01485686.pdf?arnumber=1485686

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4. Stability Investigation of Large Gate-Width Metamorphic High Electron-Mobility Transistors at Cryogenic Temperature;IEEE Transactions on Microwave Theory and Techniques;2016-10

5. Comparative analysis of microwave low-noise amplifiers under laser illumination;Microwave and Optical Technology Letters;2016-07-27

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