Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells-Reference-Cited by-同舟云学术

Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells

Published:2016-11-28 Issue:22 Volume:109 Page:223102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Schulz S.¹,Tanner D. S. P.¹²,O'Reilly E. P.¹²,Caro M. A.³⁴^ORCID,Tang F.⁵,Griffiths J. T.⁵^ORCID,Oehler F.⁵,Kappers M. J.⁵,Oliver R. A.⁵^ORCID,Humphreys C. J.⁵^ORCID,Sutherland D.⁶,Davies M. J.⁶,Dawson P.⁶^ORCID

Affiliation:

1. Photonics Theory Group, Tyndall National Institute, Dyke Parade, Cork, Ireland

2. Department of Physics, University College Cork, Cork, Ireland

3. Department of Electrical Engineering and Automation, Aalto University, Espoo 02150, Finland

4. COMP Centre of Excellence in Computational Nanoscience, Aalto University, Espoo 02150, Finland

5. Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS, United Kingdom

6. School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL, United Kingdom

Funder

Engineering and Physical Sciences Research Council (EPSRC)

Science Foundation Ireland (SFI)

Seventh Framework Programme (FP7)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4968591

Reference21 articles.

1. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

2. Efficiency Drop in GreenInGaN/GaNLight Emitting Diodes: The Role of Random Alloy Fluctuations

3. How to decide between competing efficiency droop models for GaN-based light-emitting diodes

4. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

5. The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells

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