The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells-Reference-Cited by-同舟云学术

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The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells

Published:2016-05-14 Issue:18 Volume:119 Page:181505
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Dawson P.¹^ORCID,Schulz S.²,Oliver R. A.³^ORCID,Kappers M. J.³,Humphreys C. J.³^ORCID

Affiliation:

1. School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL, United Kingdom

2. Photonics Theory Group, Tyndall National Institute, Dyke Parade, Cork, Ireland

3. Department of Material Science and Metallurgy, 27 Charles Babbage Road, University of Cambridge, Cambridge CB3 0FS, United Kingdom

Funder

Engineering and Physical Sciences Research Council (EPSRC)

Science Foundation Ireland (SFI)

Seventh Framework Programme (FP7)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4948237

Reference59 articles.

1. Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities

2. Towards understanding the emission efficiency of nitride quantum wells

3. Efficiency droop behaviors of InGaN∕GaN multiple-quantum-well light-emitting diodes with varying quantum well thickness

4. High Internal Quantum Efficiency Blue-Green Light-Emitting Diode with Small Efficiency Droop Fabricated on Low Dislocation Density GaN Substrate

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2. Cathodoluminescence studies of the optical properties of a zincblende InGaN/GaN single quantum well;Nanotechnology;2024-07-11

3. Perspective: Theory and simulation of highly mismatched semiconductor alloys using the tight-binding method;Journal of Applied Physics;2024-03-13

4. Impact of random alloy fluctuations on the carrier distribution in multicolor ( In , Ga ) N / GaN quantum well systems;Physical Review Applied;2024-02-27

5. Efficiency droop in zincblende InGaN/GaN quantum wells;Nanoscale;2024

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