Compositional, structural, and electrical characterization of plasma oxidized thin aluminum layers for spin-tunnel junctions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.373677
Reference15 articles.
1. Large Magnetoresistance at Room Temperature in Ferromagnetic Thin Film Tunnel Junctions
2. The electrical and magnetic response of yoke-type read heads based on a magnetic tunnel junction
3. Microstructured magnetic tunnel junctions (invited)
4. Exchange-biased magnetic tunnel junctions fabricated with in situ natural oxidation
5. Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited)
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1. Reduction of charge offset drift using plasma oxidized aluminum in SETs;Scientific Reports;2020-10-26
2. Reduced resistance drift in tunnel junctions using confined tunnel barriers;Journal of Applied Physics;2017-11-14
3. Large time-dependent coercivity and resistivity modification under sustained voltage application in a Pt/Co/AlOx/Pt junction;Journal of Applied Physics;2015-05-07
4. Effect of thermal annealing on the ac impedance of Co(75)/Al2O3(2.3)/Co(5.0)/Al2O3(2.3)/Co(50) double-barrier MTJs;Current Applied Physics;2014-10
5. Impedance spectroscopy of micron sized magnetic tunnel junctions with MgO tunnel barrier;Applied Physics Letters;2010-06-07
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