Effect of thermal annealing on the ac impedance of Co(75)/Al2O3(2.3)/Co(5.0)/Al2O3(2.3)/Co(50) double-barrier MTJs-Reference-Cited by-同舟云学术

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Effect of thermal annealing on the ac impedance of Co(75)/Al2O3(2.3)/Co(5.0)/Al2O3(2.3)/Co(50) double-barrier MTJs

Published:2014-10 Issue:10 Volume:14 Page:1389-1395
ISSN:1567-1739
Container-title:Current Applied Physics
language:en
Short-container-title:Current Applied Physics

Author:

Anh Nguyen Tuan,Tuan Nguyen Anh,Nga Nguyen Tuyet,Tue Nguyen Anh,Van Cuong Giap

Funder

National Foundation for Science and Technology Development

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

Reference38 articles.

1. Bias voltage effect on tunnel magnetoresistance in fully epitaxial MgO double-barrier magnetic tunnel junctions

2. T. Nozaki, N. Tezuka, K. Inomata, Phys. Rev. Lett. 96 (2006) 027208.

3. Large Tunnel Magnetoresistance of 1056% at Room Temperature in MgO Based Double Barrier Magnetic Tunnel Junction

4. Double magnetic tunnel junctions with cross-magnetization configurations for electrical detection of domain-wall structures

5. Influence of annealing temperature and thickness of a CoFeB middle layer on the tunnel magnetoresistance of MgO based double barrier magnetic tunnel junctions

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thickness-, Composition-, and Magnetic-Field-Dependent Complex Impedance Spectroscopy of Granular-Type-Barrier Co/Co-Al2O3/Co MTJs;Journal of Electronic Materials;2016-03-24

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