Influence of annealing temperature and thickness of a CoFeB middle layer on the tunnel magnetoresistance of MgO based double barrier magnetic tunnel junctions-Reference-Cited by-同舟云学术

Influence of annealing temperature and thickness of a CoFeB middle layer on the tunnel magnetoresistance of MgO based double barrier magnetic tunnel junctions

Published:2009-01 Issue:1 Volume:105 Page:014510
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Reinartz A.,Schmalhorst J.,Reiss G.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3065521

Reference29 articles.

1. Tunneling between ferromagnetic films

2. Large Magnetoresistance at Room Temperature in Ferromagnetic Thin Film Tunnel Junctions

3. A. Thomas, Ph.D. thesis, Bielefeld University, 2003.

4. 230% room-temperature magnetoresistance in CoFeB∕MgO∕CoFeB magnetic tunnel junctions

5. Influence of annealing on the bias voltage dependence of tunneling magnetoresistance in MgO double-barrier magnetic tunnel junctions with CoFeB electrodes

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1. Observation of single-spin transport in an island-shaped CoFeB double magnetic tunnel junction prepared by magnetron sputtering;Philosophical Magazine;2016-01-19

2. Effect of thermal annealing on the ac impedance of Co(75)/Al2O3(2.3)/Co(5.0)/Al2O3(2.3)/Co(50) double-barrier MTJs;Current Applied Physics;2014-10

3. Size Effect of Inserted Iron Nanoparticles in the MgO-Based Double Barrier Magnetic Tunnel Junction;IEEE Transactions on Magnetics;2014-01

4. Field sensing in MgO double barrier magnetic tunnel junctions with a superparamagnetic Co50Fe50 free layer;Journal of Applied Physics;2012-06

5. Spin-dependent tunneling spectroscopy in MgO-based double-barrier magnetic tunnel junctions;Journal of Applied Physics;2012-04