Influence of annealing on the bias voltage dependence of tunneling magnetoresistance in MgO double-barrier magnetic tunnel junctions with CoFeB electrodes-Reference-Cited by-同舟云学术

Influence of annealing on the bias voltage dependence of tunneling magnetoresistance in MgO double-barrier magnetic tunnel junctions with CoFeB electrodes

Published:2006-10-16 Issue:16 Volume:89 Page:162501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Feng Gen,van Dijken Sebastiaan,Coey J. M. D.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2362977

Reference23 articles.

1. Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions

2. Giant tunneling magnetoresistance in fully epitaxial body-centered-cubic Co∕MgO∕Fe magnetic tunnel junctions

3. Spin-dependent tunneling spectroscopy in single-crystal Fe∕MgO∕Fe tunnel junctions

4. Static and dynamic aspects of spin tunnelling in crystalline magnetic tunnel junctions

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