Observation of the transferred‐electron effect in GaxIn1−xAsyP1−y
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.89651
Reference5 articles.
1. Velocity‐field characteristics of Ga1−xInxP1−yAsyquaternary alloys
2. Growth and Characterization of InP-lnGaAsP Lattice-Matched Heterojunctions
3. Growth and characterization of InGaAsP–InP lattice‐matched heterojunctions
4. Geometrical magnetoresistance and hall mobility in gunn effect devices
5. Bandgap and lattice constant of GaInAsP as a function of alloy composition
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Novel velocity–electric field relation for modelling of compound semiconductor field-effect transistors;IEE Proceedings - Circuits, Devices and Systems;1998
2. Analysis of the transferred-electron effect in the InGaAsP system;Solid-State Electronics;1987-02
3. Current instabilities in Ga0.47In0.53As transferred-electron devices;Electronics Letters;1985
4. High‐field electron transport in InxGa1−xAsyP1−y(λg=1.2 μm);Applied Physics Letters;1982-12
5. Bound‐free emission in HgBr;Applied Physics Letters;1982-11
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