Analysis of the transferred-electron effect in the InGaAsP system
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference49 articles.
1. Liquid Phase Epitaxial Growth, Electron Mobility and Maximum Drift Velocity of In1-xGaxAs (x\cong0.5) for Microwave Devices
2. Observation of the transferred‐electron effect in GaxIn1−xAsyP1−y
3. Transferred-electron oscillation in n-In0.53Ga0.47As
4. Transferred-electron oscillations in In0.53Ga0.47As
5. Symp. on Gallium Arsenide and Related Compounds;Marsh,1981
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1. Ultrafast evanescently coupled waveguide MUTC-PDs with high responsivity;Optics Express;2024-04-18
2. Gain and threshold-current calculation of V-groove quantum-wire InGaAs-InP laser;IEEE Journal of Quantum Electronics;2002-12
3. MESFET-like transferred-electron devices in In0.53Ga0.47As;Electronics Letters;1993
4. Carrier-concentration dependence of velocity-field characteristics in ln0.53Ga0.47 as;Journal of Electronic Materials;1992-12
5. Extremely high electron mobilities in modulation doped Ga1−xInxAs/InP heterostructures grown by LP-MOVPE;Journal of Crystal Growth;1992-02
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