High‐field electron transport in InxGa1−xAsyP1−y(λg=1.2 μm)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93402
Reference13 articles.
1. Observation of the transferred‐electron effect in GaxIn1−xAsyP1−y
2. Saturation velocity determination for In0.53Ga0.47As field‐effect transistors
3. Hot electron and magneto-transport properties of In1−xGaxP1−yAsy liquid phase epitaxial films
4. Background carrier concentration and electron mobility in LPE In1−xGaxAsyP1−ylayers
5. Compositional dependence of the electron mobility in Inl-x Gax Asy P1-y
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1. Transport optimisation in PIN photodiodes using mixed depletion region;International Journal of Electronics Letters;2014-05-27
2. Waveguide pin photodetectors: theoretical analysis and design criteria;IEE Proceedings J Optoelectronics;1989
3. Analysis of the transferred-electron effect in the InGaAsP system;Solid-State Electronics;1987-02
4. Optical time‐of‐flight investigation of ambipolar carrier transport in GaAlAs using GaAs/GaAlAs double quantum well structures;Applied Physics Letters;1986-10-13
5. High-speed zero-bias waveguide photodetectors;Electronics Letters;1986
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