Properties of SiGe oxides grown in a microwave oxygen plasma
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.360556
Reference24 articles.
1. Heterojunction bipolar transistors using Si-Ge alloys
2. Resonant tunneling through a Si/GexSi1−x/Si heterostructure on a GeSi buffer layer
3. Physics and applications of GexSi1-x/Si strained-layer heterostructures
4. Enhancement-mode quantum-well Ge/sub x/Si/sub 1-x /PMOS
5. Kinetics and mechanism of oxidation of SiGe: dry versus wet oxidation
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1. Different Growth-Temperature Effects on the Liquid-Phase-Deposited SiO[sub 2] Grown on Strained SiGe;Electrochemical and Solid-State Letters;2010
2. Investigation of Electrical Properties of Thermally Annealed SiGe Metal–Oxide–Semiconductor Capacitors Prepared by Liquid-Phase Deposition of Silicon Dioxide;Japanese Journal of Applied Physics;2009-08-20
3. Physico-chemical and electrical properties of rapid thermal oxides on Ge-rich SiGe heterolayers;Applied Surface Science;2006-11
4. Investigation of thermal effect on electrical properties of Si0.887Ge0.113 and Si0.887−yGe0.113Cy films;Journal of Applied Physics;2004-04-15
5. Interface properties and reliability of ultrathin oxynitride films grown on strained Si1−xGex substrates;Journal of Applied Physics;2003-03
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