Interface properties and reliability of ultrathin oxynitride films grown on strained Si1−xGex substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1540224
Reference34 articles.
1. Characterization of ultrathin oxynitride (18-21 A) gate dielectrics by NH/sub 3/ nitridation and N/sub 2/O RTA treatment
2. Short Range Order and the Nature of Defects and Traps in Amorphous Silicon Oxynitride Governed by the Mott Rule
3. MOSFET transistors fabricated with high permitivity TiO/sub 2/ dielectrics
4. Temperature dependence of electrical properties of N2O/O2/N2O-grown oxides on strained SiGe
5. Rapid thermal oxidation of epitaxial SiGe thin films
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1. Surface passivation of boron emitters on n-type c-Si solar cells using silicon dioxide and a PECVD silicon oxynitride stack;RSC Advances;2016
2. Physical Mechanism of Threshold Voltage Modulation by Ge Channel Ion Implantation in the TiN/HfO2Gate Stack Systems;Japanese Journal of Applied Physics;2011-06-20
3. Physical Mechanism of Threshold Voltage Modulation by Ge Channel Ion Implantation in the TiN/HfO2Gate Stack Systems;Japanese Journal of Applied Physics;2011-06-01
4. Hot Carrier and Negative-Bias Temperature Instability Reliabilities of Strained-Si MOSFETs;IEEE Transactions on Electron Devices;2007-07
5. Gate Dielectrics on Engineered Substrates;Series in Material Science and Engineering;2007-01-11
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